A new type of transistor could bring about a bevy of innovative electronic applications, ranging from wearables to implants to IoT devices, due to the tiny amount of power it uses. Developed by ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect ...

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

Sponsored by Texas Instruments: Though they still vie for the largest slice of the power-design pie with LDMOS and SiC MOSFETs, GaN devices offer superior specs that may ultimately make them the ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...

Properties of wide-bandgap materials, with a focus on SiC. How a bridgeless totem-pole topology can help cut losses. A breakdown of the half-bridge inverter topology The efficiency of power-conversion ...

The field of cryogenic power electronics explores the enhancement of power conversion devices through operation at extremely low temperatures. By utilising cryogenic cooling methods (typically ...

How do you pack more power into an electric car? The answer may be electronic transistors made of gallium oxide, which could enable automakers to boost energy output while keeping vehicles lightweight ...

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced new radio-frequency (RF) power transistors built using an advanced ...