GaN Systems offers an evaluation platform for its GaN enhancement-mode high-electron-mobility transistors (E-HEMTs) with half-bridge designs that boost output power by more than 30% without increasing ...
Gallium nitride (GaN) HEMT based power transistors are fast becoming adopted for many high power amplifier applications from CW to pulsed or modulated requirements. The key advantage of GaN HEMT ...
Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...
Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Wolfspeed, a global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has extended its family of 50-V unmatched GaN HEMT RF power ...
DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...
The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...
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