Gallium-nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications.

The city’s towering challenges include an abandoned skyscraper covered in graffiti. At David Kordansky Gallery, it inspires a tower of its own. By Jonathan Griffin and Carlos Jaramillo The institution ...

Why more and more companies worldwide are embracing this planning process Suzanne is a content marketer, writer, and fact-checker. She holds a Bachelor of Science in Finance degree from Bridgewater ...

Abstract: Analog/RF IC design has long been a heavily manual process, from circuit topology generation to sizing and to layout. In the entire design process ...

The thumbnails below link to full-sized samples taken with the Canon RF 45mm F1.2 STM lens mounted on a Canon EOS R6 Mark III camera.

Fraunhofer IAF and the Max Planck Institute for Radio Astronomy have provided 145 high-performance low-noise amplifiers for the ALMA radio telescope array in Chile’s Atacama Deser ...

Abstract: This article proposes an improved differential evolution multiobjective particle swarm optimization algorithm (DEV-MOPSO) for the design of dual-band power amplifiers (PAs). This algorithm ...